An integrated circuit (36) includes a layered superlattice material (60, 60', 92) having formula (1), where A1, A2 ... Aj represent A-site elements (84) in a perovskite-like structure, S1, S2 ... Sk represent superlattice generator elements (87), B1, B2 ... Bl represent B-site elements (86) in a perovskite-like structure (94), Q represents an anion (88), the superscripts indicate the valences of the respective elements (84, 87, 86, 88) the subscripts indicate the number of atoms of the element in the unit cell (89), and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories (36). Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories (36).
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