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Brief description of the analog modulation and a monolithic circuit melangeur comprising a stage of the field effect transistors is not biased

机译:包括一级场效应晶体管的模拟调制和单片电路混频器的简要说明不带偏见

摘要

The invention concerns a method and a circuit for analogue phase and/or amplitude modulation of a high frequency carrier signal with an Î or Q low frequency analogue modulation signal, comprising at a least mixer stage (5, 6) including two field-effect transistor, called modulation transistors (21, 22), mounted with the sources (23, 24) jointly connected to ground, and whereof the drains (25, 26) are not polarised. The method consists in applying on the gates (30, 31) of the modulation transistors (21, 22) I or Q modulating analog electric signals, oI/o or oQ/o at low frequency matching each other, whereof the amplitude is less than a maximum value Amax beyond which the power of the signal modulated in output is no longer proportional to the power of the modulating signal.
机译:本发明涉及一种利用α或Q低频模拟调制信号对高频载波信号进行模拟相位和/或幅度调制的方法和电路,该方法和电路至少包括包括两个场效应晶体管的混频器级(5、6)。所谓的调制晶体管(21、22),其安装有共同接地的源极(23、24),并且其漏极(25、26)没有极化。该方法包括在调制晶体管(21、22)的栅极(30、31)上以低频调制I或Q调制模拟电信号 I Q 相互匹配,其幅度小于最大值Amax,超过最大值Amax,输出中调制的信号功率不再与调制信号的功率成比例。

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