首页> 外国专利> Charged-particle-beam optical systems and microlithography apparatus comprising a non-absorbing shaping aperture

Charged-particle-beam optical systems and microlithography apparatus comprising a non-absorbing shaping aperture

机译:包括非吸收成形孔的带电粒子束光学系统和微光刻设备

摘要

Charged-particle-beam (CPB) optical systems, and CPB microlithography apparatus including CPB optical systems, are disclosed that include a “shaping aperture” that absorbs a very low percentage of incident charged particles and hence does not experience excessive temperature increases due to bombardment by and absorption of incident charged particles. Nevertheless, the shaping apertures are effective for trimming and shaping a charged particle beam to produce a downstream-propagating beam having a desired transverse profile. The aperture opening in the shaping aperture is defined in a conductive thin-film membrane. The membrane thickness is configured to cause charged particles incident on the membrane to experience scattering (e.g., forward-scattering). CPB optical systems including the shaping aperture also include a “screening aperture” downstream of the shaping aperture to block (absorb) scattered charged particles. The screening aperture is made from a relatively thick conductive sheet and is situated where the shaped beam forms a crossover downstream of the shaping aperture.
机译:公开了带电粒子束(CPB)光学系统以及包括CPB光学系统的CPB微光刻设备,其包括“成形孔径”和“成形孔径”。它吸收了非常低百分比的入射带电粒子,因此不会因入射带电粒子的轰击和吸收而导致温度过度升高。然而,成形孔对于修剪和成形带电粒子束以产生具有期望的横向轮廓的下游传播束是有效的。成形孔中的孔开口限定在导电薄膜膜中。膜厚度构造成使入射在膜上的带电粒子经历散射(例如,前向散射)。包括成形孔的CPB光学系统还包括“屏蔽孔”。在成形孔的下游以阻挡(吸收)分散的带电粒子。屏蔽孔由相对较厚的导电片制成,并且位于成形束在成形孔的下游形成交叉的位置。

著录项

  • 公开/公告号US2001016299A1

    专利类型

  • 公开/公告日2001-08-23

    原文格式PDF

  • 申请/专利权人 NIKON CORPORATION;

    申请/专利号US20010790194

  • 发明设计人 HAJIME YAMAMOTO;

    申请日2001-02-20

  • 分类号G03C5/00;A61N5/00;G21G5/00;

  • 国家 US

  • 入库时间 2022-08-22 01:07:12

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