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Surface acoustic wave device, shear bulk wave transducer, and longitudinal bulk wave transducer

机译:弹性表面波装置,剪切体波传感器及纵向体波传感器

摘要

A surface acoustic wave device includes a substrate and electrode disposed on the substrate. The electrode has a specific resistance &rgr; of up to about 1 &OHgr;.cm and is made of a ZnO film with a low resistance having an impurity doping. A piezoelectric film having a specific resistance &rgr; of at least about 106 &OHgr;.cm and a lattice constant within approximately ±20% of that of ZnO is disposed on the electrode. An interdigital electrode is disposed on the piezoelectric film.
机译:表面声波装置包括基板和设置在该基板上的电极。电极的比电阻为&r; ZnO膜的厚度约为1Ω.cm,并且由具有杂质掺杂的低电阻的ZnO膜制成。具有电阻率rr的压电体膜。至少约10 6 Sup&OHgr.cm的晶格常数设置在电极上,且其晶格常数在ZnO的晶格常数的约±20%之内。叉指电极设置在压电膜上。

著录项

  • 公开/公告号US2001035695A1

    专利类型

  • 公开/公告日2001-11-01

    原文格式PDF

  • 申请/专利权人 MURATA MANUFACTURING CO. LTD.;

    申请/专利号US20010842330

  • 发明设计人 TOSHINORI MIURA;MICHIO KADOTA;

    申请日2001-04-24

  • 分类号H01L41/04;

  • 国家 US

  • 入库时间 2022-08-22 01:06:53

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