Advanced IC bonding pad design for preventing stress induced passivation cracking and pad delimitation through stress bumper pattern and dielectric pin-on effect

摘要

An improved metal bonding pad is disclosed which can prevent the formation of cracks during the high temperature PECVD deposition, and the subsequent annealing, of a passivation layer which is formed to encroach the metal bonding pad and provide an encapsulation force on the metal bonding pad. The metal bonding pad comprises a plurality of stress bumpers on the periphery thereof. The stress bumpers can be hollow elongated round-cornered rectangles, pin-shaped circles, Y-shaped polygons, or ellipses. The stress bumpers, which create a discontinuous structure in the metal pad, can effectively stop stress propagation as well as relieve and re-direct stress propagation, so as to maintain the integrity of the passivation encroachment and prevent the peeling off problems often observed with the metal bonding pad.