Lithographic method utilizing charged particle beam exposure and fluorescent film

摘要

A lithography method is applied to a lithography system comprising a charged particle beam generation section for generating a charged particle beam, a mask stage for holding a transfer mask to which the charged particle beam is applied, and a wafer stage for holding a wafer to be processed so as to face the charged particle beam generation section via the transfer mask. A fluorescent film is disposed between the transfer mask and the wafer coated with a photoresist thereon. When the fluorescent film is irradiated with the charged particle beam which passes through an opening of the transfer mask, an ultraviolet light is emitted from the fluorescent film and applied onto the photoresist film formed on the wafer.