Semiconductor processing method of forming hemispherical grain polysilicon and a substrate having a hemispherical grain polysilicon layer

摘要

A semiconductor processing method of depositing a hemispherical grain polysilicon layer on a substrate includes, a) chemical vapor depositing a layer of silicon atop a substrate within a chemical vapor deposition reactor at a selected temperature and at a selected pressure; b) without removing the substrate from the reactor after providing the silicon layer, and without exposing the substrate to surface cleaning conditions within the reactor after providing the silicon layer, in situ exposing the silicon layer to oxidizing conditions within the reactor effective to grow a layer of silicon dioxide to a thickness of at least 5 Angstroms; and c) without removing the substrate from the reactor after the oxidizing step, in situ chemical vapor depositing a layer of hemispherical grain polysilicon over the silicon dioxide layer. Alternately, an oxide layer is chemical vapor deposited as opposed to grown by oxidation. Substrates produced according to the method are also disclosed.