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Photoconductive thin film, and photovoltaic device making use of the same

机译:光电导薄膜和使用该光电导薄膜的光电器件

摘要

A photoconductive thin film formed on a substrate and having at least hydrogen and crystal grains of silicon, which film has an Urbach energy Eu of 60 meV or below as measured by the constant photocurrent method. This film provides a photoconductive thin film free of light degradation and having superior photoconductivity, and provides a photovoltaic device having superior temperature characteristics and long-term stability.
机译:通过恒定光电流法测得的在基底上形成的至少具有氢和硅晶粒的光电导薄膜,该薄膜的Urbach能量Eu为60 meV或更低。该膜提供了没有光降解并且具有优异的光电导性的光电导薄膜,并且提供了具有优异的温度特性和长期稳定性的光电器件。

著录项

  • 公开/公告号US6215061B1

    专利类型

  • 公开/公告日2001-04-10

    原文格式PDF

  • 申请/专利权人 CANON KABUSHIKI KAISHA;

    申请/专利号US19990250246

  • 发明设计人 TOSHIMITSU KARIYA;

    申请日1999-02-16

  • 分类号H01L310/00;

  • 国家 US

  • 入库时间 2022-08-22 01:04:38

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