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Tunneling magnetoresistive element and magnetic sensor using the same
Tunneling magnetoresistive element and magnetic sensor using the same
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机译:隧道磁阻元件和使用该隧道磁阻元件的磁传感器
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摘要
A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magnetoresistive element having a first magnetic layer of a soft magnetic material formed on a flat substrate, first and second tunnel barrier layers formed on the first magnetic layer, magnetic particles of a ferromagnetic material provided between the first and second tunnel barrier layers, and a second magnetic layer of a soft magnetic material formed on the second tunnel barrier layer so as to create tunneling junctions.
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