首页> 外国专利> Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system

Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system

机译:使用多腔室半导体晶片处理系统的过渡腔室在半导体晶片上沉积材料的方法和设备

摘要

An improvement in the deposition of materials in a multiple chamber semiconductor processing cluster tool comprising a first cluster of first chambers, a second cluster of second chambers and a transition chamber located between the first cluster and the second cluster, where the transition chamber is adapted to deposit a material upon a wafer. Specifically, the transition chamber provides a flash coating of PVD copper on the wafer which significantly improves the adhesion of subsequently CVD deposited bulk copper without sacrifice in the throughput of the cluster tool.
机译:改进了多腔室半导体加工群集工具中的材料沉积,该工具包括第一腔室的第一群集,第二腔室的第二群集以及位于第一群集和第二群集之间的过渡腔室,其中过渡腔室适合于在晶片上沉积材料。具体而言,过渡腔室在晶片上提供了PVD铜的快速涂层,这可以显着提高后续CVD沉积的块状铜的附着力,而不会牺牲簇集工具的产量。

著录项

  • 公开/公告号US6251759B1

    专利类型

  • 公开/公告日2001-06-26

    原文格式PDF

  • 申请/专利权人 APPLIED MATERIALS INC.;

    申请/专利号US19980165661

  • 申请日1998-10-03

  • 分类号H01L212/00;H01L214/40;

  • 国家 US

  • 入库时间 2022-08-22 01:03:59

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