Ion-beam treatment to prepare surfaces of p-CdTe films

摘要

A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising:;a) placing a CdS/CdTe device into a chamber and evacuating the chamber;;b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality;;c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure;;d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and;e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.