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Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture

机译:用于常规四分之一微米和较小尺寸的二元掩模制造的等离子体除渣的临界尺寸控制方法

摘要

A method of forming a mask from a metal layer deposited upon a substrate patterned for exposure of a workpiece to radiation of a specific range of wavelengths with the substrate being transparent to the radiation comprises the following steps. Form the metal layer superjacent to the substrate. Form a photoresist layer superjacent to the metal layer. Expose the photoresist layer to a pattern. Develop the photoresist to Form a photoresist mask with an opening therethrough. Bake the photoresist mask, the metal layer and the substrate. Perform a descum operation. Perform an isotropic etching of the metal layer through the opening in the mask. Perform an after etching inspection measurement. Strip the photoresist mask. Perform an after stripping inspection measurement. The isotropic etching is performed with a wet etchant. The descum operation is performed with a dry plasma process including oxygen and nitrogen gases and an inert gas selected from argon and helium.
机译:一种由沉积在被图案化的衬底上的金属层上形成的掩模的方法,该金属层被图案化以使工件暴露于特定波长范围的辐射,并且衬底对辐射是透明的,包括以下步骤。形成与基板相邻的金属层。形成与金属层相邻的光刻胶层。将光致抗蚀剂层曝光为图案。显影光致抗蚀剂以形成具有穿过其的开口的光致抗蚀剂掩模。烘烤光致抗蚀剂掩模,金属层和基板。执行除渣操作。通过掩模中的开口对金属层进行各向同性蚀刻。执行蚀刻后检查测量。剥去光刻胶掩模。进行剥离后的检查测量。各向同性蚀刻用湿蚀刻剂进行。脱渣操作通过干法等离子体工艺进行,该工艺包括氧气和氮气以及选自氩气和氦气的惰性气体。

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