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The atom (fuse the semi-conducting material which is joined,) using it is low optical possesses the wavelength response range which is expanded level image detection device
The atom (fuse the semi-conducting material which is joined,) using it is low optical possesses the wavelength response range which is expanded level image detection device
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机译:使用低光学的原子(融合的半导体材料)具有波长响应范围扩大的图像检测装置
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摘要
An imaging device (10, 10') has a plurality of unit cells (11), that contribute to forming an image of a scene. The imaging device includes a layer of wide bandgap semiconductor (18) material (e.g., silicon) having photogate charge-mode readout circuitry (20, 22, 24), such as CCD or CMOS circuitry, disposed upon a first surface of the layer. In one embodiment a second, opposing surface of the layer is bonded at a heterojunction interface or atomic bonding layer (16) to a surface of a layer of narrower bandgap semiconductor material (e.g., InGaAs or HgCdTe), that is selected for absorbing electromagnetic radiation having wavelengths longer than about one micrometer (i.e., the NIR or longer) and for generating charge carriers. The generated charge carriers are transported across the heterojunction interface for collection by the photogate Charge-mode readout circuitry. The layer of narrower bandgap material may be disposed upon a surface of a transparent substrate, and also may be differentiated into a plurality of mesa structures (14a). In further embodiments the absorbing layer may have an equivalent or a wider bandgap than the layer having the readout circuitry. IMAGE
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