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High sensitivity method of detection and high sensitivity detection device null of the heavy metal in the silicon wafer

机译:硅片中重金属的高灵敏度检测方法及高灵敏度检测装置

摘要

PROBLEM TO BE SOLVED: To provide a detection method and device for simply detecting heavy metal in a silicon wafer bulk with high sensitivity while eliminating a need for a pretreatment such as a heat treatment where a secondary contamination can easily occur. SOLUTION: By applying an electric field to the surface of a silicon wafer, heavy metal in a wafer bulk is condensed on a surface or near the surface, and then a condensation layer on the surface is subjected to heavy metal analysis using a method and device for detecting the heavy metal in the silicon wafer bulk with high sensitivity. In this case, a means for applying an electric field to the surface of the silicon wafer to condense the heavy metal in the wafer bulk on the surface or near the surface and a means for performing the heavy metal analysis of a wafer surface layer are provided in the method for detecting heavy metal in the silicon wafer bulk with high sensitivity.
机译:解决的问题:提供一种检测方法和装置,其以高灵敏度简单地检测硅晶片块中的重金属,同时消除了诸如热处理之类的容易发生二次污染的预处理的需要。解决方案:通过向硅晶片的表面施加电场,晶片块中的重金属在表面或表面附近凝结,然后使用一种方法和设备对表面上的凝结层进行重金属分析。用于高灵敏度检测硅晶圆块中的重金属。在这种情况下,提供了一种向硅晶片的表面施加电场以使表面或附近的晶片块中的重金属冷凝的装置以及对晶片表层进行重金属分析的装置。用于高灵敏度检测硅晶片块中重金属的方法。

著录项

  • 公开/公告号JP3289666B2

    专利类型

  • 公开/公告日2002-06-10

    原文格式PDF

  • 申请/专利权人 信越半導体株式会社;

    申请/专利号JP19980016370

  • 发明设计人 速水 善範;小出 任子;

    申请日1998-01-12

  • 分类号G01N1/36;C30B33/00;G01N23/223;G01N23/225;G01N33/00;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 01:00:03

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