首页> 外国专利> CRITICAL CURRENT CONTROL METHOD OF HIGH TEMPERATURE SUPERCONDUCTING INTRINSIC JOSEPHSON JUNCTION

CRITICAL CURRENT CONTROL METHOD OF HIGH TEMPERATURE SUPERCONDUCTING INTRINSIC JOSEPHSON JUNCTION

机译:高温超导本征约瑟夫逊结的临界电流控制方法

摘要

PROBLEM TO BE SOLVED: To provide a critical current control method of a high temperature superconducting intrinsic Josephson junction which can control adequately a critical current of an intrinsic junction by implanting ions of impurity element in copper oxide high temperature superconductor.;SOLUTION: When silicon ions are implanted in the copper oxide high temperature superconductor, strength of Josephson bonding between Cu-O existing naturally in crystal is reduced, so that the critical current of the intrinsic Josephson junction can be controlled. That is, when silicon ion implantation is not performed, voltage current characteristic of the copper oxide high temperature superconductor is as shown in Fig.1 (a). When silicon ion implantation is performed, the voltage current (c axis) characteristic changes as shown in Fig.1 (b).;COPYRIGHT: (C)2002,JPO
机译:要解决的问题:提供一种高温超导本征约瑟夫逊结的临界电流控制方法,该方法可以通过将杂质元素的离子注入氧化铜高温超导体中来充分控制本征结的临界电流。解决方案:当硅离子时当将其注入到氧化铜高温超导体中时,晶体中自然存在的Cu-O之间的约瑟夫森键的强度降低,从而可以控制本征约瑟夫森结的临界电流。即,当不进行硅离子注入时,氧化铜高温超导体的电压电流特性如图1(a)所示。进行硅离子注入时,电压电流(c轴)的特性变化如图1(b)所示。COPYRIGHT:(C)2002,JPO

著录项

  • 公开/公告号JP2002198578A

    专利类型

  • 公开/公告日2002-07-12

    原文格式PDF

  • 申请/专利权人 JAPAN SCIENCE & TECHNOLOGY CORP;

    申请/专利号JP20000394155

  • 发明设计人 NAKAJIMA KENSUKE;YAMASHITA TSUTOMU;

    申请日2000-12-26

  • 分类号H01L39/22;H01L39/24;

  • 国家 JP

  • 入库时间 2022-08-22 00:59:14

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号