PLASMA ETCHING METHOD, PLASMA ETCHING SYSTEM AND PLASMA PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a system for etching a material of low reactivity in the processing of product while reducing adhesion of reaction products to the side wall of a reaction tube made of a dielectric.;SOLUTION: The falling part 33 of a coil antenna 23 is brought close to the outer circumference of a reaction tube 14 in order to establish capacitive coupling and the coil antenna 23 is made to turn along the outer circumference of the reaction tube 14. An ion sheath is formed on the inner wall of the reaction tube 14 through capacitive coupling and almost all ions in plasma move toward a sample 22 and etch the sample. A very small part of ions moves toward the coil antenna 23 and collides against the inner wall of the reaction tube 14. Ions accelerated by the ion sheath formed through capacitive coupling of the coil antenna 23 collide against etching products trying to adhere to the inner wall of the reaction tube 14 thus diffusing the etching products.;COPYRIGHT: (C)2002,JPO