SUBSTRATE FOR TRANSFER MASK, TRANSFER MASK, METHOD FOR MANUFACTURING THE TRANSFER MASK, AND METHOD FOR EXPOSING CHARGED PARTICLE BEAM AND CHARGED PARTICLE BEAM EXPOSURE SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a substrate for a transfer mask, capable of stably manufacturing the mask which does not have faults, without having to break the transfer pattern of an upper single-crystal silicon wafer in a step of manufacturing the mask by using the substrate for the mask, its transfer mask, and to provide a method for manufacturing the same.;SOLUTION: The substrate for the transfer mask comprises single crystal silicon wafers on an upper part and a lower part of a silicon oxide film in the thickness range of 0.2 μm to 0.8 μm. The transfer mask uses the substrate for the mask. Further, the method for manufacturing the mask comprises a step of forming the transfer pattern on an upper single-crystal silicon wafer of the substrate for the mask, a step of forming an opening at a lower single- crystal silicon wafer, and a step of removing a silicon oxide film of the opening, at least after both the previous steps.;COPYRIGHT: (C)2002,JPO