TEMPERATURE-SENSITIVE RESISTANCE FILM, ITS MANUFACTURING METHOD, AND INFRARED SENSOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a temperature-sensitive resistance film which does not require heat treatment after its formation, can be formed in a thin film by the sputtering method under a low-temperature condition, and causes phase transition at a low temperature, and in addition, the temperature coefficient of resistance of which has a large absolute value of about -30%/°C or smaller in the phase transition temperature region, and to provide a method of manufacturing the film.;SOLUTION: An oxide film, containing chromium and composed mainly of vanadium, is formed on a substrate by sputtering a V2O3 target and Cr2O3 pellets. Fig. 1 shows a semilogarithmic graph showing the temperature characteristics of the specific resistance of the oxide film containing chromium and composed mainly of vanadium, and formed as the temperature-sensitive resistance film in a temperature increasing process and made by plotting the temperature(°C) on the abscissa and the specific resistance ρ (Ω.cm) on the ordinate (logarithmic scale).;COPYRIGHT: (C)2002,JPO