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METHOD FOR MANUFACTURING TITANIUM OXIDE SINGLE CRYSTAL THIN FILM OF ANATASE-TYPE CRYSTAL STRUCTURE

机译:锐钛型晶体结构的二氧化钛单晶薄膜的制造方法

摘要

PROBLEM TO BE SOLVED: To reduce the crystal defect, etc. in a thin film of titanium dioxide by forming the structure of the thin film into single crystal and to improve characteristics such as photocatalytic reaction efficiency, that is, to improve the efficiency of reaction where the decomposition and removal of harmful gas such as nitrogen oxides are performed by using the single crystal thin film as a photocatalyst, in a method for manufacturing a titanium dioxide single crystal thin film of anatase-type crystal structure. SOLUTION: There is provided a method for manufacturing the titanium dioxide (TiO2) single crystal thin film having anatase-type crystal structure on a single crystal substrate of lanthanum aluminate (LaAlO3), magnesium oxide (MgO), stabilized zirconia (YSZ) or LSAT([LaAlO3]0.3)-([SrAl0.5Ta0.5O3]0.7) by a laser ablation film deposition method. Moreover, substrate temperature for depositing the titanium dioxide single crystal thin film of anatase-type crystal structure is controlled to 360-520 deg.C, and also oxygen gas pressure is controlled to 10-100 mTorr.
机译:解决的问题:通过将薄膜的结构形成为单晶来减少二氧化钛薄膜中的晶体缺陷等,并改善诸如光催化反应效率的特性,即提高反应效率其中,通过使用单晶薄膜作为光催化剂来分解和去除诸如氮氧化物之类的有害气体,在一种制备锐钛矿型晶体结构的二氧化钛单晶薄膜的方法中。解决方案:提供了一种在铝酸镧(LaAlO3),氧化镁(MgO),稳定氧化锆(YSZ)或LSAT的单晶基板上制造具有锐钛矿型晶体结构的二氧化钛(TiO2)单晶薄膜的方法。 ([LaAlO3] 0.3)-([SrAl0.5Ta0.5O3] 0.7)通过激光烧蚀膜沉积方法。另外,将用于沉积锐钛矿型晶体结构的二氧化钛单晶薄膜的基板温度控制为360〜520℃,并且将氧气压力控制为10〜100mTorr。

著录项

  • 公开/公告号JP2002030417A

    专利类型

  • 公开/公告日2002-01-31

    原文格式PDF

  • 申请/专利权人 JAPAN ATOM ENERGY RES INST;

    申请/专利号JP20000213765

  • 发明设计人 YAMAMOTO HARUYA;

    申请日2000-07-14

  • 分类号C23C14/08;B01D53/86;B01J19/12;B01J21/10;B01J23/10;B01J23/20;B01J35/02;C01G23/07;C23C14/28;C30B29/16;

  • 国家 JP

  • 入库时间 2022-08-22 00:57:06

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