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DC BOOSTING/DEBOOSTING CIRCUIT

机译:DC升压/降压电路

摘要

PROBLEM TO BE SOLVED: To reduce the scale of a circuit, and to achieve a high conversion efficiency, even if a necessary boosting ratio is high.;SOLUTION: When boosting operation is performed, current flows by the route of DC power source 1, to winding 10a of a reactor 10, to MOSFET 3, and to DC source 1 when the MOSFET 3 is in an on-state; and by the route of DC source 1, to winding 10a, to diode 6, to winding 10b, to diode 8, to capacitor 12, to capacitor 13, and to DC source 1 when the MOSFET 3 is in an off- state, and the capacitors 12, 13 are charged, and voltage is increased. When deboosting operation is performed, current flows by the route of DC power source 16, to MOSFET 4, to winding 10b, to diode 18, and to DC power source 16 when the MOSFET 4 is in an on-state, and by the route of winding 10a, to capacitor 21, to diode 7, and to winding 10a when the MOSFET 4 is in an off-state, and a capacitor 21 is charged. On/off operations of the MOSFET 3 or MOSFET 4 are repeated by a constant ratio.;COPYRIGHT: (C)2002,JPO
机译:要解决的问题:即使必要的升压比很高,也要减小电路规模并实现高转换效率。;解决方案:执行升压操作时,电流会通过直流电源1的路径流动。当MOSFET 3处于导通状态时,它连接到电抗器10的绕组10a,MOSFET 3和直流电源1。当MOSFET 3处于截止状态时,通过直流电源1的路径到达绕组10a,到达二极管6,到达绕组10b,到达二极管8,到达电容器12,到达电容器13以及到达直流电源1,以及电容器12、13被充电,并且电压增加。当执行去boost操作时,当MOSFET 4处于导通状态时,电流通过DC电源16的路径,到MOSFET 4,到绕组10b,到二极管18,以及DC电源16的路径和通过该路径的电流流动。当MOSFET 4处于截止状态时,绕组10a,10b,电容器21,二极管7,以及绕组10a的第一端,第二端,第二端,第二端,第二端,第二端,第二端,第二端,第二端,第二端,第二端,第二端,第二端,第二端,第二端和第二端10a都将充电。以恒定的比率重复MOSFET 3或MOSFET 4的开/关操作。版权所有:(C)2002,JPO

著录项

  • 公开/公告号JP2002153063A

    专利类型

  • 公开/公告日2002-05-24

    原文格式PDF

  • 申请/专利权人 FUJI ELECTRIC CO LTD;

    申请/专利号JP20000339841

  • 发明设计人 YODA KAZUYUKI;

    申请日2000-11-08

  • 分类号H02M3/28;

  • 国家 JP

  • 入库时间 2022-08-22 00:56:06

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