首页> 外国专利> METHOD FOR DEPOSITING FILM, METHOD FOR FABRICATING ELECTROOPTIC DEVICE, ELECTROOPTIC DEVICE, AND ATMOSPHERIC PRESSURE CVD SYSTEM

METHOD FOR DEPOSITING FILM, METHOD FOR FABRICATING ELECTROOPTIC DEVICE, ELECTROOPTIC DEVICE, AND ATMOSPHERIC PRESSURE CVD SYSTEM

机译:沉积膜的方法,制造电光装置的方法,电光装置和大气压力CVD系统

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a film on a substrate for mass production from the start, a method for fabricating a thin film transistor, a method for fabricating an electrooptic device, an electrooptic device, an electronic apparatus, and an atmospheric pressure CVD system.;SOLUTION: At the time of forming a BPSG film in an atmospheric pressure CVD system 100, a settling process is performed at first such that TES gas, TMOP gas and TEB gas, among film deposition gases, are supplied at a high concentration to a dispersion head 152 and O3 gas is not supplied to the dispersion head 152. Subsequently, film deposition gas is supplied at a specified concentration to the dispersion head 152 in a film deposition process thus forming a BPSG film on a TFT array substrate 10.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种从一开始就在基板上沉积膜以进行批量生产的方法,一种制造薄膜晶体管的方法,一种制造电光器件的方法,一种电光器件,一种电子设备以及一种光学器件。解决方案:在大气压CVD系统100中形成BPSG膜时,首先执行沉降过程,以便在成膜气体中供应TES气体,TMOP气体和TEB气体,分散头152中没有高浓度的气体,并且没有将O 3 气体提供给分散头152。随后,在膜沉积过程中,以指定的浓度将膜沉积气体提供给分散头152。在TFT阵列基板10上形成BPSG膜。版权所有:(C)2002,日本特许厅

著录项

  • 公开/公告号JP2002319580A

    专利类型

  • 公开/公告日2002-10-31

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20010124570

  • 发明设计人 FUKUHARA KEIJI;

    申请日2001-04-23

  • 分类号H01L21/31;G02F1/1368;G09F9/30;G09F9/35;H01L21/316;H01L29/786;

  • 国家 JP

  • 入库时间 2022-08-22 00:55:39

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