首页> 外国专利> SEMICONDUCTOR LIGHT-EMITTING DEVICE, ITS MANUFACTURING METHOD, OPTICAL TRANSMISSION MODULE, OPTICAL TRANSMISSION /RECEPTION MODULE, OPTICAL COMMUNICATION SYSTEM, COMPUTER SYSTEM, AND NETWORK SYSTEM

SEMICONDUCTOR LIGHT-EMITTING DEVICE, ITS MANUFACTURING METHOD, OPTICAL TRANSMISSION MODULE, OPTICAL TRANSMISSION /RECEPTION MODULE, OPTICAL COMMUNICATION SYSTEM, COMPUTER SYSTEM, AND NETWORK SYSTEM

机译:半导体发光器件,其制造方法,光传输模块,光传输/接收模块,光通信系统,计算机系统和网络系统

摘要

PROBLEM TO BE SOLVED: To provide a high-performance long wavelength semiconductor light- emitting device together with its manufacturing method where degradation in crystallinity is prevented.;SOLUTION: On a semiconductor substrate 1, an active layer 3 comprising a distortion quantum well layer (light-emitting layer) 2 and a clad layer 4 which confines light and a carrier are formed. Here, the distortion amount of the distortion quantum well layer 2 relative to the semiconductor substrate 1 and the cladding layer 4 exceeds 2%.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种高性能的长波长半导体发光器件及其制造方法,该方法可防止结晶度降低。;解决方案:在半导体衬底1上,包括畸变量子阱层的有源层3(形成发光层2和限制光的包层4以及载体。在此,畸变量子阱层2相对于半导体衬底1和覆层4的畸变量超过2%。;版权:(C)2001,JPO

著录项

  • 公开/公告号JP2001320134A

    专利类型

  • 公开/公告日2001-11-16

    原文格式PDF

  • 申请/专利权人 RICOH CO LTD;

    申请/专利号JP20000137149

  • 发明设计人 SATO SHUNICHI;

    申请日2000-05-01

  • 分类号H01S5/343;H01L33/00;H01S5/183;

  • 国家 JP

  • 入库时间 2022-08-22 00:55:26

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