METHOD FOR PRODUCING SILICON CARBIDE DUMMY WAFER AND SILICON CARBIDE DUMMY WAFER

摘要

PROBLEM TO BE SOLVED: To provide a production method in which a microcrack is coated with an SiC film and the generation of particulate is prevented, and to provide a dummy wafer made of silicon carbide which does not have a bad influence upon a silicon wafer.;SOLUTION: In this method for producing a silicon carbide dummy wafer used in the process of producing a semiconductor device, a silicon carbide dummy wafer is produced by subjecting both sides of a silicon carbide dummy wafer substrate to machining for obtaining the thickness thinner than the finished dimensions of the dummy wafer and thereafter coating the whole with the material same as that of the base metal of the dummy wafer by a CDV method.;COPYRIGHT: (C)2001,JPO