首页> 外国专利> THIN MAGNETIC HEAD WITH INTERMEDIATE GAP LAYER, MAGNETORESISTIVE LAYER AND ELECTRODE LAYERS DISPOSED BETWEEN UPPER AND LOWER GAP LAYERS

THIN MAGNETIC HEAD WITH INTERMEDIATE GAP LAYER, MAGNETORESISTIVE LAYER AND ELECTRODE LAYERS DISPOSED BETWEEN UPPER AND LOWER GAP LAYERS

机译:薄磁头,中间间隙层,磁致电阻层和电极层布置在上下间隙层之间

摘要

A thin-film magnetic head includes a nonmagnetic lower gap layer, a nonmagnetic upper gap layer, a magnetoresistive layer, an electrode layer, and an intermediate gap layer. The magnetoresistive layer and the electrode layer are formed between the lower gap layer and the upper gap layer. The intermediate gap layer is disposed between the lower gap layer and the upper gap layer, and is formed in the region at both sides of the magnetoresistive layer in the track width direction and/or in the region behind the magnetoresistive layer in the depth direction. The length of the magnetoresistive layer in the depth direction is first determined, the width of the magnetoresistive layer in the track width direction is determined, and then the hard magnetic bias layers and the electrode layers are formed.
机译:薄膜磁头包括非磁性下间隙层,非磁性上间隙层,磁阻层,电极层和中间间隙层。磁阻层和电极层形成在下间隙层和上间隙层之间。中间间隙层设置在下间隙层和上间隙层之间,并且形成在磁阻层的沿轨道宽度方向的两侧的区域中和/或形成于磁阻层的沿深度方向的后方的区域中。首先确定磁阻层在深度方向上的长度,确定磁阻层在轨道宽度方向上的宽度,然后形成硬磁偏置层和电极层。

著录项

  • 公开/公告号US2002067579A1

    专利类型

  • 公开/公告日2002-06-06

    原文格式PDF

  • 申请/专利权人 SATO KIYOSHI;

    申请/专利号US19980207244

  • 发明设计人 KIYOSHI SATO;

    申请日1998-12-08

  • 分类号G11B5/39;

  • 国家 US

  • 入库时间 2022-08-22 00:50:45

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