首页>
外国专利>
Ultra-thin interface oxidation by ozonated water rinsing for emitter poly structure
Ultra-thin interface oxidation by ozonated water rinsing for emitter poly structure
展开▼
机译:臭氧水冲洗进行超薄界面氧化,形成发射极多晶结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a method of forming an interfacial oxide in a bipolar transistor. The method comprises the step of rinsing a wafer having an exposed base region with ozonated deionized water, thereby forming an interfacial oxide layer over the exposed base region.
展开▼