首页> 外国专利> Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure

Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure

机译:具有具有金刚石层和多个微电子部件的生长衬底的复合结构及其制造方法

摘要

A method for producing a composite structure for microelectronic devices includes producing several microelectronic devices by means of a deposition method, preseeding a surface with growth seeds for a diamond and depositing the diamond layer from a gas phase. The diamond layer is provided with thin spots between the devices. According to the invention, the devices are laid down initially on a growth substrate directly and/or with the use of the material of the growth substrate. Following the deposition of the devices, the latter are seeded on their free surfaces for the diamond layer. The diamond layer is located on the seeded free surfaces of the devices.
机译:一种用于制造用于微电子器件的复合结构的方法,该方法包括:通过沉积方法制造多个微电子器件;将具有用于金刚石的生长种子的表面预先播种;以及从气相沉积金刚石层。金刚石层在装置之间具有薄点。根据本发明,首先将器件直接和/或利用生长衬底的材料放置在生长衬底上。在装置沉积之后,将后者播种在其自由表面上用于金刚石层。金刚石层位于设备的带种子的自由表面上。

著录项

  • 公开/公告号US6329674B1

    专利类型

  • 公开/公告日2001-12-11

    原文格式PDF

  • 申请/专利权人 DAIMLERCHRYSLER AG;

    申请/专利号US20000590007

  • 发明设计人 BRIGITTE KONRAD;HERBERT GUETTLER;

    申请日2000-06-09

  • 分类号H01L310/312;H01L290/60;H01L310/336;

  • 国家 US

  • 入库时间 2022-08-22 00:48:53

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