首页> 外国专利> Testing methodology for embedded memories using built-in self repair and identification circuitry

Testing methodology for embedded memories using built-in self repair and identification circuitry

机译:使用内置的自我修复和识别电路的嵌入式存储器测试方法

摘要

A method for improving the fault coverage of manufacturing tests for integrated circuits having structures such as embedded memories. In the disclosed embodiment of the invention, the integrated circuit die of a semiconductor wafer are provided with a fuse array or other circuitry capable of storing an identification number. The integrated circuit die also include an embedded memory or similar circuit and built-in self-test (BIST) and built-in self-test (BISR) circuitry. At a point early in the manufacturing test process, the fuse array of each integrated circuit die is encoded with an identification number to differentiate the die from other die of the wafer or wafer lot. The integrity of the embedded memory of each integrated circuit die is then tested at the wafer level under a variety of operating conditions via the BIST and BISR circuitry. The results of these tests are stored in ATE and associated with a particular integrated circuit die via the identification number of the die. The manufacturing test process then continues for the packaged integrated circuits. As with the unsingulated die, the packaged parts are subjected to one or more sets of stress factors, with data being gathered at each stage. Again, test results (e.g., faulty memory locations as determined by the BIST circuitry) are correlated to specific packaged parts via the identification number of the integrated circuit die. The test results of the various stages are next compared to determine if any detected repairable failures are uniform across the various operating conditions. In general, the assumption is made that an integrated circuit IC which exhibits different failure mechanisms at different stages of the testing/manufacturing process is questionable and the part is discarded.
机译:一种用于改善具有诸如嵌入式存储器的结构的集成电路的制造测试的故障覆盖率的方法。在本发明公开的实施例中,半导体晶片的集成电路管芯设置有熔丝阵列或其他能够存储识别号的电路。集成电路管芯还包括嵌入式存储器或类似电路以及内置自测(BIST)和内置自测(BISR)电路。在制造测试过程的早期,每个集成电路管芯的熔丝阵列都用一个标识号编码,以使该管芯与晶片或晶片批次的其他管芯区分开。然后,通过BIST和BISR电路,在各种操作条件下,在晶圆级别上测试每个集成电路管芯的嵌入式存储器的完整性。这些测试的结果存储在ATE中,并通过芯片的标识号与特定的集成电路芯片相关联。然后针对封装的集成电路继续进行制造测试过程。与未分割的模具一样,已封装的零件要经受一组或多组应力因子,并在每个阶段收集数据。同样,测试结果(例如,由BIST电路确定的错误的存储位置)通过集成电路管芯的识别号与特定的封装部件相关。接下来比较各个阶段的测试结果,以确定在各种运行条件下是否检测到任何可修复的故障是否一致。通常,假设在测试/制造过程的不同阶段表现出不同故障机制的集成电路IC是可疑的,并且将其丢弃。

著录项

  • 公开/公告号US6367042B1

    专利类型

  • 公开/公告日2002-04-02

    原文格式PDF

  • 申请/专利权人 LSI LOGIC CORPORATION;

    申请/专利号US19980209996

  • 发明设计人 TUAN L. PHAN;V. SWAMY IRRINKI;

    申请日1998-12-11

  • 分类号G01R312/80;

  • 国家 US

  • 入库时间 2022-08-22 00:47:34

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