A magnetoquenched superconductor device or cell includes a superconductor element disposed on a substrate and a bilayer ferromagnetic film which provides uniaxial switching. The bilayer film is formed by a first ferromagnetic film disposed on and isolated from the superconductor element; and a second ferromagnetic film disposed on and separated from the first ferromagnetic film. The first and second films are magnetically coupled and have magnetizations which are switchable between a parallel relation wherein the films produce additive magnetic fringe fields that form a weak link in a portion of the superconductor element and an antiparallel relation wherein one of the films substantially absorbs the fringe field of the other film and the resultant fringe fields in the vicinity of the superconductor are such that a weak link is not formed in the superconductor. A number of two dimensional memory arrays are provided which use rows and columns of the devices. Switching of the devices is controlled by respective write (read/write) lines or bias lines.
展开▼
