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Method of dehydroxylating a hydroxylated material and method of making a mesoporous film

机译:使羟基化的材料脱羟基的方法和中孔膜的制备方法

摘要

The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.
机译:本发明是使羟基化的二氧化硅表面脱羟基的方法,其具有使二氧化硅表面分别暴露于硅有机化合物和脱羟基气体的步骤。暴露于硅有机化合物可以处于液相,气相或溶液相,并且暴露于脱羟基气体通常在升高的温度下。在一实施方案中,脱羟基方法的改进是重复浸泡和脱羟基气体的暴露。在另一个实施方案中,该改进是使用基本上不含氢的惰性气体。在又一个实施方案中,本发明是两步脱羟基方法与制备中孔膜的表面活性剂模板方法的组合。

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