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Method for preparing iridium crucibles for crystal growth

机译:制备用于晶体生长的铱坩埚的方法

摘要

A method of preparing an iridium crucible for crystal growth. As a form of preventive maintenance or during a repair, an iridium crucible is prepared by a method of surface conditioning by way of weld puddling the entire surface of the bottom or on the sidewalls from the bottom up to a height sufficient to include the depth of the residual crystal material after pulling of a crystal or both. In this regard, the surface of the iridium crucible is pulse welded so as to puddle a small portion of the surface without penetrating the side or bottom wall. In the preferred embodiment, the entire surface of the bottom of the iridium crucible is conditioned by weld melting. Similarly, the sidewalls are similarly conditioned by way of weld puddling such as by a pulsating welder. It will be recognized that any state of the art welding apparatus, such as a GTAW welder, TIG welder, laser welder or the like, that generates temperatures sufficient to melt iridium while controlling the depth of penetration can be utilized.
机译:一种制备用于晶体生长的铱坩埚的方法。作为预防性维护或修理期间的一种形式,铱坩埚是通过表面调节的方法制备的,该方法是通过焊接将底部的整个表面或底部的整个表面从底部向上焊接到足以包括底部深度的高度。提拉晶体或同时提拉晶体后残留的晶体材料。在这方面,铱坩埚的表面是脉冲焊接的,以便在不穿透侧壁或底壁的情况下浸入一小部分表面。在优选的实施方案中,铱坩埚底部的整个表面通过焊接熔化来调节。类似地,通过焊接搅动(例如通过脉冲焊机)类似地调节侧壁。将会认识到,可以利用任何现有技术的焊接设备,例如GTAW焊机,TIG焊机,激光焊机等,其产生足以熔化铱同时控制熔深的温度。

著录项

  • 公开/公告号US6342688B1

    专利类型

  • 公开/公告日2002-01-29

    原文格式PDF

  • 申请/专利权人 CTI INC.;

    申请/专利号US20000590873

  • 发明设计人 JOHN T. ISRAEL;

    申请日2000-06-09

  • 分类号B23K90/40;

  • 国家 US

  • 入库时间 2022-08-22 00:47:03

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