Surface acoustic wave device and communication device utilizing shear horizontal waves

摘要

A surface acoustic wave device includes a quartz substrate having Euler angles (0°, &thgr;, 90°±5°) in which &thgr; is in a range of 119°≦&thgr;≦140°, and an IDT for exciting an SH wave is formed on the quartz substrate by use of an electrode material containing as a major component at least one of Ag, Mo, Cu, Ni, Cr, and Zn and having a density of at least about 7 g/cm³. The film thickness of the IDT is such that the attenuation constant is approximately zero.