menetelmu00f5 and hardware metallipinnan pu00f5u00f5llystu00f5miseksi thin, metal sisu00f5ltu00f5vu00f5llu00f5 layer

• 1. method and apparatus metallipinnan coating thin metal containing layer [P] . FI20020130A . 2003-07-25

  机译： 的方法和设备金属lipinnan涂层金属薄层

• 2. method and apparatus metallipinnan coating thin metal containing layer [P] . FI20021465A . 2003-07-25

  机译： 的方法和设备金属lipinnan涂层金属薄层

• 3. method and apparatus metallipinnan coating thin metal containing layer [P] . FI20021465A0 . 2002-08-12

  机译： 的方法和设备金属lipinnan涂层金属薄层

• 1. Low temperature atomic layer deposition of Ru thin films using a new carbonyl-based Ru precursor and non-oxidizing reactants; Applications to the seed layer for Cu metallization [C] . Hyun-Jung Lee, Shunichi Nabeya, Tae Eun Hong, International Interconnect Technology Conference . 2017
• 2. Nano-structured silicide formation by focused ion beam implantation and integration of silver metallization with thin film silicide layers. [D] . Mitan, Martin M. 2003
• 3. Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors [O] . Min-Gyu Shin, Kang-Hwan Bae, Hwan-Seok Jeong, 2020
• 4. Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si [O] . D. Thammaiah Shivakumar, Tihomir Knežević, Lis K. Nanver 2021
• 5. Evaluating mechanical properties of thin layers using nanoindentation and finite-element modeling: Implanted metals and deposited layers [R] . Knapp, J. A. , Follstaedt, D. M. , Barbour, J. C. 1996