SUPERCONDUCTING FIELD EFFECT DEVICE HAVING A SUPERCONDUCTING CHANNEL AND METHOD FOR MANUFACTURING THE SAME

摘要

A FET type superconducting device comprises a substrate having aprincipal surface, a thin superconducting channel formed of an oxidesuperconductor layer over the principal surface of the substrate, asuperconducting source region and a superconducting drain regionformed of an oxide superconductor layer over the principal surface of thesubstrate at the both ends of the superconducting channel which connectsthe superconducting source region and the superconducting drain region,so that superconducting current can flow through the superconductingchannel between the superconducting source region and thesuperconducting drain region and a gate electrode on a gate insulatordisposed on the superconducting channel for controlling thesuperconducting current flowing through the superconducting channel bya signal voltage applied to the gate electrode, wherein the superconductingdevice is isolated by a isolation layer directly formed on the principalsurface of the substrate, the superconducting layer of the superconductingchannel is directly formed on the principal surface of the substrate and thegate electrode is formed on the isolation layer excluding a portion on thegate insulator.