METHOD AND APPARATUS FOR CONTROLLING FEATURE CRITICAL DIMENSIONS BASED ON SCATTEROMETRY DERIVED PROFILE

摘要

Method for controlling critical dimensions of a feature (10) formed on a semiconductor wafer (110) includes illuminating the wafer (110); measuring light reflected off the wafer (110) to generate a profile trace; comparing the profile trace to a target profile trace; and modifying an operating recipe of a processing tool (120) used to form the feature (10) based on a deviation between the profile trace and the target profile trace. A processing line (100) includes a processing tool (120), a scatterometer (130), and a process controller (140). The processing tool (120) is adapted to form a feature (10) on a semiconductor wafer (110) in accordance with an operating recipe. The scatterometer (130) is adapted to receive the wafer (110). The scatterometer (130) includes a light source (132) adapted to illuminate the wafer (110) and a light detector (134) adapter to measure light from the light source (132) reflected off the wafer (110) to generate a profile trace. The process controller (140) is adapted to compare the profile trace to a target profile trace, and modify the operating recipe of the processing tool (120) based on a deviation between the profile trace and the target profile trace.