Method and apparatus of providing material purchasing and construction bidding system with computer network

摘要

We have discovered that the residual stress residing in a tantalum (Ta) film or a tantalum nitride (TaN x, where 0 x = 1.5) film can be controlled (tuned) by controlling particular process variables during deposition of the film. Process variables of particular interest during film deposition, for sputter-applied Ta and TaN x films, include the following: the power to the sputtering target; the process chamber pressure (i.e., the concentration of various gases and ions present in the chamber); the substrate DC offset bias voltage (typically an increase in the AC applied substrate bias power); and the temperature of the substrate upon which the film is being deposited. When the Ta or TaN x film is deposited using IMP sputtering, the power to the ionization coil can be used for stress tuning of the film. This use of IMP as the sputtering technique provides particular control over the ion bombardment of the depositing film surface. Tantalum (Ta) films deposited using the IMP method typically exhibit a residual stress ranging from about +1 x 10 +10 dynes/cm 2 (tensile stress) to about -2 x 10 +10 dynes/cm 2 (compressive stress), depending on the process variables described above. Tantalum nitride (TaN x) films deposited using the IMP method typically can be tuned to exhibit a residual stress within the same range as that specified above with reference to Ta films. We have been able to reduce the residual stress in either the Ta or TaN x films to range between about 6 x 10 +9 dynes/cm 2 and about -6 x 10 +9 dynes/cm 2 using tuning techniques described herein. The Ta and TaN x films can also be tuned subsequent to deposition using ion bombardment of the film surface and annealing of the deposited film. Barrier performance of the films can be improved by depositing the films at a substrate temperature of at least 300 °C.