SEMICONDUCTOR CIRCUIT DEVICE HAVING POWER AND GROUND LINES ADAPTED FOR HIGH FREQUENCY OPERATION

摘要

PURPOSE: To overcome the problem such that the switching operation in a GHz band of a transistor gate circuit cannot be smoothly controlled by suppressing improvement in the charge supplying capabilities of power source/ grounding wiring or transistor characteristics. CONSTITUTION: A power source pad 62a, a ground pad 62b and a signal pad 62c are arranged on a chip 61. Then, a plurality of ground wirings 63 are integrally formed in the surrounding neighborhood of the chip 61 so as to be divided from positions away from the chip 61 with certain distances. Plural signal lines 64 and power source lines 65 are formed on the ground wiring 63. The signal lines 64 and the power source lines 65 are radially extended with the lower ground wiring 63. Those signal lines 64 and the power source lines 65 are respectively led with the ground wiring 63 as stacked pair lines.