Characterizati on process using scanning acoustic microscope to detect defects in silicon-on-insulatorSOI wafer

摘要

PURPOSE: A method for inspecting a defect of a silicon-on-insulator(SOI) wafer using a scanning acoustic microscope is provided to more precisely measure distribution, density and size of a defect on an entire wafer, by observing the defect regarding the entire surface of the wafer. CONSTITUTION: The SOI wafer is polished and a cleaning process is performed regarding the SOI wafer. An HF defect region of the SOI wafer is selectively etched. A Secco defect region of the SOI wafer is selectively etched. The SOI wafer is observed by using the scanning acoustic microscope to observe a junction defect, an HF defect and a Secco defect on the entire surface of the SOI wafer.