首页> 外国专利> A monolithic single block dielectric filter and monolithic single block duplexer dielectric filter for removing higher-order mode harmonic frequency and for improving in band response

A monolithic single block dielectric filter and monolithic single block duplexer dielectric filter for removing higher-order mode harmonic frequency and for improving in band response

机译:一种单块单块介质滤波器和单块双工器介质滤波器,用于去除高阶模谐波频率并改善频带响应

摘要

PURPOSE: An integral dielectric filter and an integral duplex dielectric filter are provided to remove a high-order harmonic frequency and improve an in-band feature by forming a coupling electrode at upper and lower surfaces thereat, electrically changing a coupling direction of at least one resonator, and manufacturing a resonator longer than other resonator. CONSTITUTION: At least one resonator are formed at upper and lower surface at an integral dielectric filter by selectively patterning a coupling electrode and a common electrode. Any one of a transmitting terminal electrode and a receiving terminal electrode are selectively formed. The coupling electrode is formed at upper and lower surfaces of a resonator in which a transmitting/receiving terminal electrode is formed. Both sides coaxial resonators(RS,RS) are formed at both sides of a center coaxial resonator(RC). Each length of the both sides coaxial resonators(RS,RS) is longer than that of the center coaxial resonator(RC). Coupling electrodes(CE) are formed at upper surfaces of the coaxial resonators(RS,RC,RS). A lower common electrode is formed at an area of the center coaxial resonator(RC). Coupling electrodes(CE) are formed at the both sides coaxial resonators(RS,RS). An input electrode and an output electrode are selectively formed adjacent to the coupling electrodes(CE). The input electrode and the output electrode are independently formed away from a side common electrode and coupling electrodes(CE) by a predetermined distance.
机译:目的:提供一种集成介电滤波器和一个集成双工介电滤波器,以通过在其上,下表面形成一个耦合电极,电改变至少一个的耦合方向来消除高次谐波频率并改善带内特性。谐振器,并制造比其他谐振器更长的谐振器。组成:通过选择性地构图耦合电极和公共电极,在集成介质滤波器的上,下表面至少形成一个谐振器。选择性地形成发射端子电极和接收端子电极中的任何一个。耦合电极形成在其中形成有发射/接收端子电极的谐振器的上表面和下表面处。两侧同轴谐振器(RS,RS)形成在中心同轴谐振器(RC)的两侧。两侧同轴谐振器(RS,RS)的每个长度都比中央同轴谐振器(RC)的每个长度长。耦合电极(CE)形成在同轴谐振器(RS,RC,RS)的上表面处。下公共电极形成在中心同轴谐振器(RC)的区域。耦合电极(CE)形成在两侧的同轴谐振器(RS,RS)上。输入电极和输出电极与耦合电极(CE)相邻地选择性地形成。输入电极和输出电极独立于侧公共电极和耦合电极(CE)预定距离而形成。

著录项

  • 公开/公告号KR20020044602A

    专利类型

  • 公开/公告日2002-06-19

    原文格式PDF

  • 申请/专利权人 JANG SEI JOO;NAM SANG WOO;SENTICE CO. LTD.;

    申请/专利号KR20000073574

  • 发明设计人 JANG SEI JOO;

    申请日2000-12-06

  • 分类号H01P1/20;

  • 国家 KR

  • 入库时间 2022-08-22 00:30:55

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