Gain-coupled distributed feedback laser diode and fabrication method for the same

摘要

The present invention relates to a pure gain-coupled distribution feedback semiconductor laser and a method of manufacturing the same. The present invention provides a gain-coupled distributed feedback semiconductor laser having a vertical structure including an active layer, a buffer layer, a gain coupling layer having a diffraction grating, and a cladding layer crystal-grown on a semiconductor substrate, wherein the gain coupling has a lower bandgap energy than the active layer. After the diffraction grating is formed in the layer, the grating is filled with a refractive index compensation layer to change the structure of the existing diffraction grating. Offset into layers. Therefore, the gain-coupled distribution feedback type semiconductor laser of the present invention not only has high single mode yield but also has high side mode suppression rate characteristics.