- Single - electron memory device using the electron - hole coupling

摘要

The invention correlated single-electron penetration (Correlated Single Electron Tunneling) a blend of two or more quantum dots through the bonding arrangement shown the symptoms, and the time induced electrons-hole pairs (Electron-Hole Pair) Coulomb prevent horizontal (Coulomb Blockade of ) to provide a memory device using the phenomenon it is an object.; According to the invention, the electron-in single-electron memory device using the Coulomb horizontal prevent developer (Coulomb Blockade Phenomena) by the hole pairs includes at least two quantum dots through the bonding arrangement, the quantum dots through joint arrangement each of at least two consists of a through-bonded, and is arranged in parallel to each other are electrically coupled off significantly than a predetermined coupling force, a bond joint surfaces of the electron mobility and distant from each other not to occur in; Any one of the quantum dots through the bonding arrangement is electron-source and capable of applying the drain voltage-, the quantum dot through joint arrangement each of the source and a gate electrode for applying a gate voltage that can change the number of hole pairs the single-electron memory element, characterized in that made in a drain terminal is provided.