METHOD FOR FORMING PASSIVATION LAYER OF FFS MODE LIQUID CRYSTAL DISPLAY DEVICE

摘要

The present invention relates to a fs mode liquid crystal display device, and more particularly, to a method of forming a protective film of a fs mode liquid crystal display device for forming a silicon nitride film protective film on ITO which is a material of a pixel electrode. A method of forming a protective film of a fs mode liquid crystal display device according to the present invention is a method of forming a protective film of a fs mode liquid crystal display device for forming a silicon nitride film of a protective film on ITO, which is a material of a pixel electrode, in a fs mode liquid crystal display device. The silicon nitride film has a power of 2,000 to 3,000 W, a pressure of 2,700 to 3,500 mTorr, a gas amount of SiH ₄ gas as a source gas is 200 to 700 sccm, an amount of NH ₃ gas as a reactive gas is 7,000 to 7,200 sccm, and an N ₂ gas amount is 9,500. It is formed under the process conditions of ˜9,900 sccm.