Memory sense amplifier circuit, has precharging circuit and two amplifier stages that can be initialized to voltage supply and earth potentials respectively

摘要

The sense amplifier includes a PMOS transistor circuit (4) for rapid pre-charging of bit lines (2, 3) to a supply potential, a feedback NMOS transistor amplifier stage (43) for shifting the voltage level and amplifying the data signal on the bit lines, and a second amplifier stage (66) for further amplifying the first stage signal. The first and second stages can be initialized to supply (VDD) and earth potentials respectively.