首页> 外国专利> Device for detecting variations in properties of bonds in single molecules, e.g. determining the redox potential of biomolecules, has nanoelectrodes with gap between and nano gaps between these through which electrons can tunnel

Device for detecting variations in properties of bonds in single molecules, e.g. determining the redox potential of biomolecules, has nanoelectrodes with gap between and nano gaps between these through which electrons can tunnel

机译:用于检测单分子中键的性质变化的装置,例如确定生物分子的氧化还原电势,具有在其间具有缝隙的纳米电极和在其间具有纳米缝隙的纳米电极,电子可以通过这些电极

摘要

Device for detecting variations in properties of bonds in single molecules, e.g. determining the redox potential of biomolecules, comprising nanoelectrodes with gap between and nano gaps between these through which electrons can tunnel, is new. Device for detecting variations in the properties of bonds in single molecules comprises two nanoelectrodes (1) with a gap (2) between them which allows electrons to flow through. These are mounted on an electrically insulating base (3) and are fitted with a cover plate (4). The nanoelectrodes have a length in the upper nanometer or micrometer range and a thickness in the nanometer range. 4 - 5 nm nano gaps (13) are left between the ends (11) of the electrodes and the main gap (2). Measuring electrodes (5) connected to a measuring module (6) are attached to the opposite ends (12) of the nanoelectrodes. The main gap has a surface of less than 0.1 mu m2. The cover plate is 4 - 100 nm thick and there is an electro-capacitive cover-free zone (41) over the main and nano gaps, formed by a dielectric boundary (42) with specific bonding positions (43), so that, as a result of electro-capacitive coupling, single electrons can tunnel through the nano gaps.
机译:用于检测单分子中键的性质变化的装置,例如确定生物分子的氧化还原电势是新的,生物分子包括具有间隙的纳米电极和介于两者之间的纳米间隙,电子可以通过纳米电极隧穿。用于检测单分子中键的性质变化的装置包括两个纳米电极(1),两个纳米电极之间具有允许电子流过的间隙(2)。它们安装在电绝缘的基座(3)上,并配有盖板(4)。纳米电极的长度在上纳米或微米范围内,并且厚度在纳米范围内。在电极的末端(11)和主间隙(2)之间留有4-5 nm的纳米间隙(13)。连接至测量模块(6)的测量电极(5)附接到纳米电极的相对端(12)。主间隙的表面小于0.1μm2。盖板的厚度为4-100 nm,并且在主间隙和纳米间隙上有一个无电容的无覆盖区域(41),该区域由具有特定键合位置(43)的介电边界(42)形成,因此电容耦合的结果是,单个电子可以隧穿纳米间隙。

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