Process for the chemical-mechanical polishing of silicon wafers comprises rotating a silicon surface to be cleaned on a polishing plate covered with a polishing cloth with continuous

摘要

Process for the chemical-mechanical polishing of silicon wafers comprises rotating a silicon surface to be cleaned on a polishing plate covered with a polishing cloth with continuous addition of an alkaline polishing agent containing an abrasive material. During polishing, at least 2 microns m of material are removed from the polished silicon surface. Directly after stopping the polishing at least two different stopping agents are introduced while maintaining the rotary movement at the site of the polishing agent so that less than 0.5 microns m is removed from the silicon surface. Preferred Features: At least 12 silicon wafers can be simultaneously polished. The polishing agent consists of a colloidal mixture of 1-10 weight % SiO2 in water with addition of an alkali, preferably Na2CO3, K2CO3, NaOH, KOH, NH4OH or tetramethylammonium hydroxide.