Production of integrated circuit comprises implanting low energetic implantation and high energetic implantation in surface region having first and a second surface region

摘要

The production of an integrated circuit comprises implanting a low energetic implantation (I1) and a high energetic implantation (I2) in the surface region having a first region (A) and a second region (B). The thickness of the covering layers (1, 2) of the surface regions are selected and the implanted so that the low energetic implantation is absorbed by the second covering layer in the second surface region and the high energetic implantation is only halted by the second covering layer. The second covering layer is implanted exactly into the defined implantation depth below the second covering layer. Preferred Features: The difference in thickness between the second and first covering layers is 20-45 nm. The implantation energy of the low energetic implantation is adjusted so that it is absorbed in the second surface region by the second covering layer.