Production of a process gas used for treating semiconductor substrates comprises burning oxygen in a hydrogen-rich atmosphere in a combustion chamber to form a gas made from water vapor and hydrogen

摘要

Production of a process gas comprises burning oxygen in a hydrogen-rich atmosphere in a combustion chamber to form a gas made from water vapor and hydrogen. An Independent claim is also included for a device for producing a process gas comprising a burner (1) having a combustion chamber (5), an oxygen feed (12) and a hydrogen feed (8), an ignition unit (17) and a control unit. Preferred Features: The presence of unburned oxygen is detected upstream of the combustion chamber. The process is stopped when the unburned oxygen is detected. An inert gas is introduced into the process gas when the unburned oxygen is detected.