Programmable memory cell for non-volatile memory (ROM) with several programmable memory cells, has virtual ground line selectively connected to ground in reaction to control signal

摘要

A programmable memory cell (M1-M16), has the virtual ground line (VG0-VG2) selectively joined to ground in reaction to a control signal and the cell transistors are connected with a gate electrode to the word line (WL0-WL3) and a first- and second-electrode joined to the bit line (BL0-BL1). Selective connection of the first electrode with the virtual ground line is programmable to a specified logic level. Independent claims are given for the following: (A) A programmable ROM with several memory cells; (B) A method for writing binary data to a cell transistor in a programmable ROM; (C) A method for reading binary data in a cell transistor.