Fast diode built from elementary diodes with higher breakthrough voltage and higher direct current permissible

摘要

The power diode comprises a matrix (20) of elemental diodes (22) which are able to support an avalanche system, have an inverse recovery time of less than 50 ns and will also withstand 8A direct current and 200v inverse potential. The elemental diodes are installed on a printed circuit in rows and all the diodes in a row are connected in parallel. The rows of diodes are connected in series with final connections to an anode (32) and a cathode (34). Neither static nor dynamic balancing is required due to the ability of the elemental diodes to sustain avalanche operation.