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tunnel effect - magnetowiderstand and application of such a magnetowiderstands in a magnetic sensor
tunnel effect - magnetowiderstand and application of such a magnetowiderstands in a magnetic sensor
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机译:隧道效应-磁吸支架及其在磁传感器中的应用
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摘要
Tunnel effect magnetoresistance comprising, in the form of a stack:a first layer (12) of free magnetisation magnetic material,a "barrier" layer (16), composed of an electrically insulating material, anda second layer (14) of trapped magnetisation magnetic material,According to the invention, the thickness of the first layer (12) of magnetic material is less than 10 nm.The invention may be particularly applied to the manufacture of magnetic data read heads.
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