首页> 外国专利> Controlled thyristor-type components for use as interrupters and power converters, in particular as choppers and wave-formers, in bridge, semi-bridge or push-pull configurations

Controlled thyristor-type components for use as interrupters and power converters, in particular as choppers and wave-formers, in bridge, semi-bridge or push-pull configurations

机译:可控晶闸管型组件,用作桥,半桥或推挽式配置的断续器和功率转换器,尤其是斩波器和波形器

摘要

The thyristor-type components include a dual thyristor, a dual thyristor-diode, a component forming thyristor, a component forming thyristor-diode, an interrupter comprising one of the components, and a power converter. The dual thyristor is normally conducting and can be set in a non-conducting state by a pulse on the trigger or traversing over-current and started by the current reversal; it comprises an interrupter (T) and a diode (D) in antiparallel connection, and the control means such that the interrupter, when non-conducting, goes back to the non-conducting state if the current is not substantially reversed. The control means include a latch of RS type, whose input S (set is connected to the output of first comparator (C1) of a current through the diode (D) sensed by the first detector (D1) to a predetermined value (Imin), and whose output Q is connected to the control electrode (C) of the interrupter (T). The second comparator (C2) of a current (I) passing through the interrupter (T) sensed by the second detector (D2) to a maximum current (Imax) is connected via an OR gate to the R (reset) input of the latch. The third comparator (C3) of a voltage (V) on the interrupter sensed by the third detector (D3) to a predetermined value (Vmin) is connected via an AND gate to the control electrode (C). The other input of the AND gate is connected to the Q output of the latch. The interrupter (T) is in the form of a bipolar transistor, an insulated-gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a blockable thyristor, a thyristor controlled by a MOS transistor, or a bicontrolled interrupter. The dual thyristor-diode comprises an interrupter connected in series with a diode and the control means including the first comparator of a voltage sensed by the first detector to a predetermined value. The component forming thyristor comprises an interrupter connected in series with a diode and the control means including the second comparator of a voltage sensed by the second detector to a maximum value. The component forming thyristor-diode comprises an interrupter and a diode in antiparallel connection and the control means including the third comparator of a current through the diode sensed by the third detector to a predetermined value. The interrupter comprises the dual thyristor, the dual thyristor-diode, the component forming thyristor, or the component forming thyristor-diode. The power converter comprises one of the components, or the interrupter.
机译:晶闸管型部件包括双晶闸管,双晶闸管二极管,形成晶闸管的部件,形成晶闸管二极管的部件,包括这些部件之一的断续器以及功率转换器。双晶闸管正常导通,可通过触发器上的脉冲或运行过电流将其设置为非导通状态,并通过电流反向启动。它包括一个反并联的灭弧室(T)和一个二极管(D),以及控制装置,使得如果电流基本上没有反向,则灭弧室在不导通时会回到非导通状态。控制装置包括RS类型的锁存器,其输入S(组连接到第一比较器(C1)的输出,该第一比较器(C1)通过第一检测器(D1)感测到的二极管(D)的电流达到预定值(Imin)。 ,其输出Q连接到灭弧室(T)的控制电极(C)。第二比较器(C2)流过灭弧室(T)的电流(I)由第二检测器(D2)感测到最大电流(Imax)通过“或”门连接到锁存器的R(复位)输入端。第三比较器(C3)的第三检测器(D3)感测到的灭弧室电压(V)为预定值( Vmin)通过“与”门连接到控制电极(C),“与”门的另一个输入连接到锁存器的Q输出。中断器(T)采用双极晶体管的形式,绝缘为栅极双极晶体管(IGBT),金属氧化物半导体场效应晶体管(MOSFET),可阻断晶闸管,由MOS晶体管控制的晶闸管sistor或双控灭弧室。双晶闸管二极管包括与二极管串联的中断器,以及控制装置,其包括由第一检测器感测到预定值的电压的第一比较器。形成晶闸管的元件包括与二极管串联连接的中断器,以及包括第二比较器的控制装置,该第二比较器的第二检测器感测到的电压为最大值。形成晶闸管-二极管的元件包括一个中断器和一个反向并联的二极管,控制装置包括由第三检测器感测到的通过二极管的电流的第三比较器达到预定值。灭弧室包括双晶闸管,双晶闸管二极管,形成晶闸管的组件或形成晶闸管二极管的组件。功率转换器包括组件之一或中断器。

著录项

  • 公开/公告号FR2809234A1

    专利类型

  • 公开/公告日2001-11-23

    原文格式PDF

  • 申请/专利权人 MINARRO BERNOT INDUSTRIE DIFFUSION CONSEIL;

    申请/专利号FR20000006507

  • 发明设计人 BERNOT FRANCOIS;

    申请日2000-05-22

  • 分类号H01L29/74;H03K17/72;

  • 国家 FR

  • 入库时间 2022-08-22 00:24:26

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